A novel nano-architecture for ZnO thin films on h100i Si, GaAs and InP single crystal wafers by L-MBE as value in nano-robotic (machining) device fabrication efforts
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
A novel nano-architecture for ZnO thin films on h100i Si,
GaAs and InP single crystal wafers by L-MBE as value in
nano-robotic (machining) device fabrication efforts
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| Creator |
Ramamoorthy, K.
Sanjeeviraja, C. Jayachandran, M. Sankaranarayanan, K. Ganesan, K. Pankaj Misra, V. Kukreja, L.M. |
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| Subject |
Electrochemical Materials Science
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| Description |
In this present work, the effects of various substrate temperatures and various substrates on Zinc Oxide (ZnO) thin
film growth and on surface morphological properties were studied. To the best of our knowledge this is the first time
that laser molecular beam epitaxy (L-MBE), i.e., pulsed laser deposited (PLD) zinc oxide (ZnO) thin films on
semiconductor wafers have been applied to Semiconductor–Insulator–Semiconductor (SIS) type multi-junction solar
cells, as wide band-gap transparent conducting oxide (TCO) front electrode window layers, compatible with current
semiconductor processing techniques. As well as our main aim, the feasibility of developing highly nano-tectured thin
films was also studied simultaneously. The surface morphological and film growth characteristics of ZnO thin films laser
deposited on to various substrates like glass, Silicon (Si), Gallium Arsenide (GaAs) and Indium Phosphide (InP) at
various substrate temperatures like room temperature, 200 1C and 300 1C using ZnO pallets as targets are very novel,
intelligent and significant from reported so for. The deposition process was optimized. The micro- and nano-scale
photo-graphs of Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM) showed the
improvements of crystalline and surface nature of ZnO thin films with respect to various substrate temperatures and
substrates. Better surface architecture was observed for thin films deposited at 300 1C than RT, 200 1C and on InP than
Si and GaAs. Increasing the substrate temperature leads the films to fine nano-structure world. The results were
discussed in detail. Thus we have developed a novel nano-architecture to obtain high quality ZnO nano-crystalline
semiconductor thin films of different nano-scale grain sizes on glass and Si, GaAs and InP semiconductor single crystal
wafers by using different substrate temperatures and substrates as controlling tools as value in practical nano-robotic
(machining) device fabrication efforts.
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| Publisher |
Elsevier
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| Date |
2005
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/146/1/079-2005.pdf
Ramamoorthy, K. and Sanjeeviraja, C. and Jayachandran, M. and Sankaranarayanan, K. and Ganesan, K. and Pankaj Misra, V. and Kukreja, L.M. (2005) A novel nano-architecture for ZnO thin films on h100i Si, GaAs and InP single crystal wafers by L-MBE as value in nano-robotic (machining) device fabrication efforts. Materials Science in Semiconductor Processing, 8 (4). pp. 555-563. |
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| Relation |
http://cecri.csircentral.net/146/
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