Properties of ZnSe films brush plated on high temperature substrates
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
View Archive Info| Field | Value | |
| Title |
Properties of ZnSe films brush plated on high temperature substrates
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| Creator |
Murali, K.R.
Austine, A. Trivedi, D.C. |
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| Subject |
Functional Materials
Industrial Metal Finishing Electrochemical Materials Science |
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| Description |
ZnSe thin films were brush plated on substrates maintained at temperatures in the range 30–90 -C from the precursors. The films
exhibited cubic structure. Optical band gap of 2.70 eV was obtained. XPS measurements indicated the formation of ZnSe. AFM studies
indicated the formation of fine grains of the order of 50 nm, for the films deposited on room temperature substrates. Luminescence emission
was observed at 675 nm for an excitation of 450 nm.
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| Publisher |
Elsevier
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| Date |
2005
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/136/1/073-2005.pdf
Murali, K.R. and Austine, A. and Trivedi, D.C. (2005) Properties of ZnSe films brush plated on high temperature substrates. Materials Letters, 59 (21). pp. 2621-2624. |
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| Relation |
http://cecri.csircentral.net/136/
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