CSIR Central

A cost-effective liquid phase exfoliation process for large 2D-MoS2 nanosheets and its application in FET

IR@NPL: CSIR-National Physical Laboratory, New Delhi

View Archive Info
 
 
Field Value
 
Title A cost-effective liquid phase exfoliation process for large 2D-MoS2 nanosheets and its application in FET
 
Creator Sharma, Rohit
Chaudhary, Mahima
Kumar, Ashish
Kumari, Reena
Garg, Preeti
Umapathy, G.
Devi, L. Radhapiyari
Ojha, Sunil
Srivastava, Ritu
Sinha, O. P.
 
Subject Applied Physics/Condensed Matter
 
Description 2D-TMDC materials are supposed to be suitable materials for the electronic industry requirements due to tunable bandgap. 2D-MoS2 has an advantage over the graphene as it has direct bandgap and high on/off ratio. In this work, 2D-MoS2 nanostructures have been synthesized using a simple and cost-effective liquid phase exfoliation (LPE) method in the organic solvent without any additives. The synthesized MoS2 has up to 4-layer thick nanosheets structure which is confirm by the FESEM and Raman studies. From the UV-Visible absorption spectroscopy, the bandgap of the material is found to be 1.79 eV. This synthesized material is used as the channel material in the field effect transistor. The field effect transistor (FET) device have been fabricated in the top-gate configuration. It has been found that the current on/off ratio is of the order of 10(4)
 
Publisher American Institute of Physic
 
Date 2020
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/4552/1/A%20cost-effective%20liquid%20phase%20exfoliation.pdf
Sharma, Rohit and Chaudhary, Mahima and Kumar, Ashish and Kumari, Reena and Garg, Preeti and Umapathy, G. and Devi, L. Radhapiyari and Ojha, Sunil and Srivastava, Ritu and Sinha, O. P. (2020) A cost-effective liquid phase exfoliation process for large 2D-MoS2 nanosheets and its application in FET. Solid State Physics: Proceedings Of The 55th DAE Solid State Physics Symposium 2010, PTS A and B, 2265. 030696-0306100. ISSN 0094-243X
 
Relation http://npl.csircentral.net/4552/