Growth and structural investigation of new polycrystalline Ga3Se4 semiconductor: Evaluation of its dielectric properties
IR@NPL: CSIR-National Physical Laboratory, New Delhi
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| Title |
Growth and structural investigation of new polycrystalline Ga3Se4 semiconductor: Evaluation of its dielectric properties
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| Creator |
Abdullah, M. M.
Singh, Preeti Singh, D. P. |
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| Subject |
Optics
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| Description |
To establish the powder X-ray data we have synthesized gallium selenide (Ga3Se4) using spec. pure elements gallium and selenium of purity >99.999% adopting three different methods as solid melts, quenching, and quenching-annealing. An optimized condition for the synthesis of these materials using evacuated and sealed ampoule has been established. The powder X-ray diffraction analysis revealed that Ga3Se4 can only grow at elevated temperature by quenching and long annealing at suitable temperature. The material prepared by quenching-annealing at 500 degrees C over 500 h was identified as single phased polycrystalline Ga3Se4, and crystallizes in the cubic cell with a(o) =5.4531 angstrom, v= 162.155 angstrom(3), D-x = 5.375 g/cm(3), Z = 1, parameter of atoms Z(Ga) = 3, Z(Se) =4 and space group F43m. The low values of dielectric constant and dielectric loss confirm that the specimen has very low density of defects. Negative dielectric constant has been found.
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| Publisher |
Elsevier
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| Date |
2013
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://npl.csircentral.net/3208/1/Growth%20and%20structural%20investigation%20of%20new%20polycrystalline.pdf
Abdullah, M. M. and Singh, Preeti and Singh, D. P. (2013) Growth and structural investigation of new polycrystalline Ga3Se4 semiconductor: Evaluation of its dielectric properties. Optik , 124 (18). pp. 3215-3218. ISSN 0030-4026 |
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| Relation |
http://npl.csircentral.net/3208/
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