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Influence of annealing on dielectric and polarization behavior of PVDF thick films

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Influence of annealing on dielectric and polarization behavior of PVDF thick films
 
Creator Kaur, Shobhneek
Kumar, Ashok
Sharma, Amit L.
Singh, Dwijendra P.
 
Subject Electronics and Electrical Engineering
Meteorology & Atmospheric Sciences
Applied Physics/Condensed Matter
 
Description The polyvinylidene fluoride (PVDF) thick film has been fabricated by a solution casting method. The fabricated film is subjected to annealing at 50, 90, 100, 110 and 130 A degrees C for 5 h. The effect of annealing on structural, crystalline, dielectric and polarization behavior is investigated. The beta-phase PVDF is found to coexist with alpha-phase for annealing temperature upto 100 A degrees C, after that beta-phase is converted to alpha-phase. The film annealed at 100 A degrees C, exhibits enhanced permittivity, reduced tangent loss and enhanced polarization. The dielectric permittivity and tangent loss of film annealed at 100 A degrees C are similar to 11 and similar to 0.025 respectively for the frequency range of 10(3)-10(5) Hz. The saturation polarization for this film is similar to 1.27 A mu C/cm(2). The enhanced dielectric permittivity and polarization for the film annealed at 100 A degrees C might be attributed to increase in crystalline alpha and beta-phase interface as well as crystalline amorphous interface. The thick film of PVDF with improved dielectric and polarization behavior could be useful for high power electronics application.
 
Publisher Springer Verlag
 
Date 2017-06
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/2745/1/Influence%20of%20annealing%20on%20dielectric%20and%20polarization%20behavior%20of%20PVDF%20thick%20films.pdf
Kaur, Shobhneek and Kumar, Ashok and Sharma, Amit L. and Singh, Dwijendra P. (2017) Influence of annealing on dielectric and polarization behavior of PVDF thick films. Journal of Materials Science: Materials in Electronics, 28. pp. 8391-8396. ISSN 0957-4522
 
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