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Growth of a bulk-size single crystal of sulphamic acid by an in-house developed seed rotation solution growth technique and its characterization

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Growth of a bulk-size single crystal of sulphamic acid by an in-house developed seed rotation solution growth technique and its characterization
 
Creator -, Sonia
Vijayan, N.
Bhushan, Medha
Thukral, Kanika
Raj, Rishabh
Maurya, K. K.
Haranath, D.
Dhas, S. A. Martin Britto
 
Subject Chemistry
Crystallography
 
Description A bulk sulphamic acid single crystal has been grown by a modified seed rotation technique. The lattice dimensions of the grown single crystal were confirmed using powder X-ray diffraction, and it was found that it crystallized in an orthorhombic structure with space group Pbca. The strain in the lattice was calculated by the Williamson-Hall equation. The crystalline perfection was examined by high-resolution X-ray diffraction and found to be extremely good (the single peak of the rocking curve having an FWHM of similar to 8.0 ''). The luminescence behaviour was recorded in the wavelength region between 400 and 630 nm using an Xe flash lamp which acts as an excitation source. The shock damage threshold was measured for the grown crystal in order to determine the mechanical capability of the title compound. The thermal parameter of sulphamic acid was calculated by photoacoustic spectroscopy.
 
Publisher International Union of Crystallography
 
Date 2017-06
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/2733/1/Growth%20of%20a%20bulk-size%20single%20crystal%20of%20sulphamic%20acid%20by%20an%20in-house%20developed%20seed%20rotation%20solution%20growth%20technique%20and%20its%20characterization.pdf
-, Sonia and Vijayan, N. and Bhushan, Medha and Thukral, Kanika and Raj, Rishabh and Maurya, K. K. and Haranath, D. and Dhas, S. A. Martin Britto (2017) Growth of a bulk-size single crystal of sulphamic acid by an in-house developed seed rotation solution growth technique and its characterization. Journal of Applied Crystallography, 50. pp. 763-768. ISSN 1600-5767
 
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