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Films of Reduced Graphene Oxide with Metal Oxide Nanoparticles Formed at a Liquid/Liquid Interface as Reusable Surface Enhanced Raman Scattering Substrates for Dyes

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Films of Reduced Graphene Oxide with Metal Oxide Nanoparticles Formed at a Liquid/Liquid Interface as Reusable Surface Enhanced Raman Scattering Substrates for Dyes
 
Creator Bramhaiah, K.
Singh, Vidya N.
Kavitha, C.
John, Neena S.
 
Subject Chemistry
Materials Science
Applied Physics/Condensed Matter
Nanoscience/ Nanotechnology
 
Description Free standing, thin films of reduced graphene oxide (rGO) with ZnO, CuO and SnO2 nanostructures are prepared at a water/toluene interface utilizing simple interfacial reaction and self-assembly. rGO-ZnO, rGO-CuO and rGO-SnO2 films exhibit unique morphologies such as hexagonal cylinders, elongated splinters, and balls, respectively, wrapped by rGO layers. The hybrid films exhibit surface enhanced Raman scattering (SERS) of rhodamine 6G dye with enhancement factors one order higher than bare metal oxide caused by a synergic effect of charge transfer between the dye, metal oxide and rGO. Doping with Ag+ ions improves SERS enhancement in rGO-Ag-ZnO hybrid films, exploiting the electromagnetic effect of metal surface plasmons. Detection sensitivity up to 10 mu M dye with an enhancement factor of 104 is shown. The enhanced photodegradation rate by the hybrid films is utilized for UV induced regeneration of the used SERS substrate and is demonstrated for successive use of different analytes.
 
Publisher American Scientific Publishers
 
Date 2017-04
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/2725/1/Films%20of%20Reduced%20Graphene%20Oxide.pdf
Bramhaiah, K. and Singh, Vidya N. and Kavitha, C. and John, Neena S. (2017) Films of Reduced Graphene Oxide with Metal Oxide Nanoparticles Formed at a Liquid/Liquid Interface as Reusable Surface Enhanced Raman Scattering Substrates for Dyes. Journal of Nanoscience and Nanotechnology, 17 (4). pp. 2711-2719. ISSN 1533-4880
 
Relation http://npl.csircentral.net/2725/