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Scalable Production of Sensor Arrays Based on High-Mobility Hybrid Graphene Field Effect Transistors

IR@NPL: CSIR-National Physical Laboratory, New Delhi

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Title Scalable Production of Sensor Arrays Based on High-Mobility Hybrid Graphene Field Effect Transistors
 
Creator Gao, Zhaoli
Kang, Hojin
Naylor, Carl H.
Streller, Frank
Ducos, Pedro
Serrano, Madeline D.
Ping, Jinglei
Zauberman, Jonathan
Rajesh, Dr
Carpick, Robert W.
Wang, Ying-Jun
Park, Yung Woo
Luo, Zhengtang
Ren, Li
Johnson, A. T. Charlie
 
Subject Materials Science
Nanoscience/ Nanotechnology
 
Description We have developed a scalable fabrication process for the production of DNA biosensors based on gold nanoparticle-decorated graphene field effect transistors (AuNP-Gr-FETs), where monodisperse AuNPs are created through physical vapor deposition followed by thermal annealing. The FETs are created in a four-probe configuration, using an optimized bilayer photolithography process that yields chemically clean devices, as confirmed by XPS and AFM, with high carrier mobility (3590 +/- 710 cm2/V.s) and low unintended doping (Dirac voltages of 9.4 +/- 2.7 V). The AuNP-Gr-FETs were readily functionalized with thiolated probe DNA to yield DNA biosensors with a detection limit of 1 nM and high specificity against noncomplementary DNA. Our work provides a pathway toward the scalable fabrication of high-performance AuNP-Gr-FET devices for label-free nucleic acid testing in a realistic clinical setting.
 
Publisher American Chemical Society
 
Date 2016-10-19
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/2349/1/Scalable%20Production%20of%20Sensor.pdf
Gao, Zhaoli and Kang, Hojin and Naylor, Carl H. and Streller, Frank and Ducos, Pedro and Serrano, Madeline D. and Ping, Jinglei and Zauberman, Jonathan and Rajesh, Dr and Carpick, Robert W. and Wang, Ying-Jun and Park, Yung Woo and Luo, Zhengtang and Ren, Li and Johnson, A. T. Charlie (2016) Scalable Production of Sensor Arrays Based on High-Mobility Hybrid Graphene Field Effect Transistors. ACS Applied Materials and Interfaces , 8 (41). 27546-27552 . ISSN 1944-8244
 
Relation http://npl.csircentral.net/2349/