Mathematical model for calculating ionicity of binary Semiconductors
IR@CIMFR: CSIR-Central Institute of Mining and Fuel Research, Dhanbad
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| Title |
Mathematical model for calculating ionicity of binary Semiconductors
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| Creator |
Singh, Jitendra Kumar
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| Subject |
Instrumentation
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| Description |
The ionicity has been one of the most important parameters of semiconductors, which determines other properties such as band gap, micro hardness, refractive index etc. The band gap energy determines the critical wavelength (λ = 1.24/Eg) of semiconductors and hence these semiconductors are used in various linear and non-linear optical devices. In this paper we have developed a simple relation between ionicity and bond length of III-V, II-VI and I-VII semiconductors by simulation method. The proposed relation has been found to be linear in nature. Based on proposed relation, we have calculated ionicity of III-V, II-VI and I-VII semiconductors. The calculated values of ionicity are compared with the experimental and reported values of different workers. A fairly good agreement has been obtained between them. The curves have also been plotted between bond length and ionicity. This relation may be used to determine the values of ionicity for new materials belonging to these groups of semiconductors.
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| Date |
2010
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| Type |
Article
PeerReviewed |
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| Format |
application/msword
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| Identifier |
http://cimfr.csircentral.net/1727/1/5.%20Mathematical%20%20model%20for%20calculating%20ionicity%20%20ob%20binary%20semiconductors%3B%20%20IJOMS.doc
Singh, Jitendra Kumar (2010) Mathematical model for calculating ionicity of binary Semiconductors. International Journal of Material Sciences, 5 (1). pp. 59-65. ISSN 0973-4589 |
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http://cimfr.csircentral.net/1727/
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