CSIR Central

Band gap engineering of boron nitride by graphene and its application as positive electrode material in asymmetric supercapacitor device

IR@CMERI: CSIR- Central Mechanical Engineering Research Institute (CMERI), Durgapur

View Archive Info
 
 
Field Value
 
Title Band gap engineering of boron nitride by graphene and its application as positive electrode material in asymmetric supercapacitor device
 
Creator Saha, Sanjit
Jana, Milan
Khanra, Partha
Samanta, Pranab
Koo, Hyeyoung
Murmu, Naresh Chandra
Kuila, Tapas
 
Subject Chemistry
 
Description Nanostructured hexagonal boron nitride (h-BN)/reduced graphene oxide (RGO) composite is prepared by insertion of h-BN into the graphene oxide through hydrothermal reaction. Formation of the super lattice is confirmed by the existence of two separate UV–visible absorption edges corresponding to two different band gaps. The composite materials show enhanced electrical conductivity as compared to the bulk h-BN. A high specific capacitance of ∼824 F g–1 is achieved at a current density of 4 A g–1 for the composite in three-electrode electrochemical measurement. The potential window of the composite electrode lies in the range from −0.1 to 0.5 V in 6 M aqueous KOH electrolyte. The operating voltage is increased to 1.4 V in asymmetric supercapacitor (ASC) device where the thermally reduced graphene oxide is used as the negative electrode and the h-BN/RGO composite as the positive electrode. The ASC exhibits a specific capacitance of 145.7 F g–1 at a current density of 6 A g–1 and high energy density of 39.6 W h kg–1 corresponding to a large power density of ∼4200 W kg–1. Therefore, a facile hydrothermal route is demonstrated for the first time to utilize h-BN-based composite materials as energy storage electrode materials for supercapacitor applications.
 
Publisher ACS Publications
 
Date 2015
 
Type Article
PeerReviewed
 
Identifier Saha, Sanjit and Jana, Milan and Khanra, Partha and Samanta, Pranab and Koo, Hyeyoung and Murmu, Naresh Chandra and Kuila, Tapas (2015) Band gap engineering of boron nitride by graphene and its application as positive electrode material in asymmetric supercapacitor device. ACS Applied Materials & Interfaces, 7 (26). pp. 14211-14222.
 
Relation http://cmeri.csircentral.net/186/