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Microstructural and Compositional Characterisation of Electronic Materials

IR@CGCRI: CSIR-Central Glass and Ceramic Research Institute, Kolkata

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Title Microstructural and Compositional Characterisation of Electronic Materials
 
Creator Rao, D V Sridhara
Sankarasubramanian, R
Kumar, Deepak
Singh, V
Bhat, K Mahadeva
Mishra, P
Vinayak, S
Srinivasan, T
Tyagi, R
Muraleedharan, K
Muralidharan, R
Banerjee, D
 
Subject Engineering Materials
 
Description Microstructural and compositional characterisation of electronic materials in support of the development of GaAs, GaN and GaSb based multilayer device structures is described. Electron microscopy techniques employing nanometer and sub-nanometer scale imaging capability of structure and chemistry have been widely used to characterise various aspects of electronic and optoelectronic device structures such as InGaAs quantum dots, InGaAs pseudomorphic (pHEMT) and metamorphic (mHEMT) layers and the ohmic metallisation of GaAs and GaN high electron mobility transistors, nichrome thin film resistors, GaN heteroepitaxy on sapphire and silicon substrates, as well as InAs and GaN nanowires. They also established convergent beam electron diffraction techniques for determination of lattice distortions in III-V compound semiconductors, EBSD for crystalline misorientation studies of GaN epilayers and high-angle annular dark field techniques coupled with digital image analysis for the mapping of composition and strain in the nanometric layered structures. Also, in-situ SEM experiments were performed on ohmic metallisation of pHEMT device structures. The established electron microscopy expertise for electronic materials with demonstrated examples is presented.
 
Publisher DRDO
 
Date 2016-07
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://cgcri.csircentral.net/3721/1/rao.pdf
Rao, D V Sridhara and Sankarasubramanian, R and Kumar, Deepak and Singh, V and Bhat, K Mahadeva and Mishra, P and Vinayak, S and Srinivasan, T and Tyagi, R and Muraleedharan, K and Muralidharan, R and Banerjee, D (2016) Microstructural and Compositional Characterisation of Electronic Materials. Defence Science Journal, 66 (4, SI). pp. 341-352. ISSN 0011-748X
 
Relation http://cgcri.csircentral.net/3721/