Characteristics of GZO thinfilms deposited by sol–gel dip coating
IR@CECRI: CSIR-Central Electrochemical Research Institute, Karaikudi
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| Title |
Characteristics of GZO thinfilms deposited by sol–gel dip coating
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| Creator |
Kalaivanan, A.
Perumal, S. Pillai, N.N. Murali, K.R. |
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| Subject |
Electrochemical Materials Science
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| Description |
Zinc oxide(ZnO)films were deposited by sol–gel dip coating using the acrylamide route. The films were doped with different concentrations of gallium in the range 250–1200 ppm. The films exhibited hexagonal structure. The grain size decreased from 100 to 10 nm as the dopant concentration increased. The resistivity of the doped samples decreased from 10 power 3 to 3*10 power 3 Ohm cm. The bandgap value shifted towards the short-wavelength region as the dopant concentration increased. XPS studies indicated doping of Ga in ZnO
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| Publisher |
Elsevier
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| Date |
2011
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| Type |
Article
PeerReviewed |
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| Format |
application/pdf
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| Identifier |
http://cecri.csircentral.net/2922/1/133-2011.pdf
Kalaivanan, A. and Perumal, S. and Pillai, N.N. and Murali, K.R. (2011) Characteristics of GZO thinfilms deposited by sol–gel dip coating. Materials Science in Semiconductor Processing, 14 (02). pp. 94-96. ISSN 1369-8001 |
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| Relation |
http://cecri.csircentral.net/2922/
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