CSIR Central

(7X7) reconstruction as barrier for Schottky-barrier formation at the Ga/Si (111) interface

IR@NPL: CSIR-National Physical Laboratory, New Delhi

View Archive Info
 
 
Field Value
 
Title (7X7) reconstruction as barrier for Schottky-barrier formation at the Ga/Si (111) interface
 
Creator Kumar, Praveen
Kumar, Mahesh
Shivaprasad, S. M.
 
Subject Superconductivity
Ferroelectrics and Semiconductors
Applied Physics/Condensed Matter
 
Description We report the change in electronic properties of the Ga/Si interface by monitoring the Ga(3d) core-level photoelectron spectra and electron diffraction induced by submonolayer Ga adsorption on Si(111)-7X7 surface. The spectra shows a flat band for submonolayer coverages, attributed to the metallic nature of the Si(111)-7X7 reconstruction and a premetallic band structure of two-dimensional Ga islands. At 1 ML, electron diffraction pattern shows metallic (7X7) to semiconducting (1X1) phase-transition and the spin-orbit split branching ratio of Ga (2p) core level attain the metallic bulk value, and the barrier assumes the Schottky–Mott value while full width half maxima and branching ratio attain bulk values. © 2010 American Institute of Physics.
 
Publisher American Institute of Physics
 
Date 2010-09-23
 
Type Article
PeerReviewed
 
Format application/pdf
 
Identifier http://npl.csircentral.net/5/1/1.pdf
Kumar, Praveen and Kumar, Mahesh and Shivaprasad, S. M. (2010) (7X7) reconstruction as barrier for Schottky-barrier formation at the Ga/Si (111) interface. Applied Physics Letters, 97 (12). ISSN 1077-3118
 
Relation http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000097000012122105000001&idtype=cvips&doi=10.1063/1.3490250&prog=normal
http://npl.csircentral.net/5/